Wavelength extended 2.4 μm heterojunction InGaAs...

Infrared Physics & Technology 2008 Vol. 51; Iss. 4

Wavelength extended 2.4 μm heterojunction InGaAs photodiodes with InAlAs cap and linearly graded buffer layers suitable for both front and back illuminations

Yonggang Zhang, Yi Gu, Zhaobing Tian, Aizhen Li, Xiangrong Zhu, Yanlan Zheng
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Volume:
51
Year:
2008
Language:
english
Pages:
6
DOI:
10.1016/j.infrared.2007.09.003
File:
PDF, 222 KB
english, 2008
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