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Characterization of photodiodes, made from a p-type epitaxial layer grown on n-type InSb  by LPE method
Gh. Sareminia, M. Hajian, H. Simchi, Sh. Eminov, M. MoradiVolume:
53
Year:
2010
Language:
english
Pages:
5
DOI:
10.1016/j.infrared.2010.05.003
File:
PDF, 620 KB
english, 2010