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Raman Scattering Determination of Free Carrier Concentration and Surface Depletion Layer in (100) p-GaAs Grown by Molecular-Beam Epitaxy
Fukasawa, Ryoichi, Wakaki, Moriaki, Ohta, Kimihiro, Okumura, HajimeVolume:
25
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.25.652
Date:
April, 1986
File:
PDF, 247 KB
1986