Double-Band Anticrossing in GaAsSbN Induced by Nitrogen and...

Applied Physics Express 2013 / 12 Vol. 6; Iss. 12

Double-Band Anticrossing in GaAsSbN Induced by Nitrogen and Antimony Incorporation

Lin, Kuang-I, Lin, Kuo-Lung, Wang, Bo-Wei, Lin, Hao-Hsiung, Hwang, Jenn-Shyong
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Volume:
6
Language:
english
Journal:
Applied Physics Express
DOI:
10.7567/APEX.6.121202
Date:
December, 2013
File:
PDF, 538 KB
english, 2013
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