Ge/GeSn heterostructures grown on Si (100) by...

Semiconductors 2015 / 1 Vol. 49; Iss. 1

Ge/GeSn heterostructures grown on Si (100) by molecular-beam epitaxy

Sadofyev, Yu. G., Martovitsky, V. P., Bazalevsky, M. A., Klekovkin, A. V., Averyanov, D. V., Vasil’evskii, I. S.
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Volume:
49
Language:
english
Journal:
Semiconductors
DOI:
10.1134/S1063782615010248
Date:
January, 2015
File:
PDF, 618 KB
english, 2015
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