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A full-range dual material gate tunnel field effect transistor drain current model considering both source and drain depletion region band-to-band tunneling
Pandey, Pratyush, Vishnoi, Rajat, Kumar, M. JagadeshVolume:
14
Language:
english
Journal:
Journal of Computational Electronics
DOI:
10.1007/s10825-014-0649-x
Date:
March, 2015
File:
PDF, 768 KB
english, 2015