Deep Levels in GaAs Grown Using Superlattice Intermediate Layers on Si Substrates by MOCVD
Soga, Tetsuo, Sakai, Shiro, Umeno, Masayoshi, Hattori, ShuzoVolume:
25
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.25.1510
Date:
October, 1986
File:
PDF, 542 KB
1986