Deep Levels in GaAs Grown Using Superlattice Intermediate...

Deep Levels in GaAs Grown Using Superlattice Intermediate Layers on Si Substrates by MOCVD

Soga, Tetsuo, Sakai, Shiro, Umeno, Masayoshi, Hattori, Shuzo
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Volume:
25
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.25.1510
Date:
October, 1986
File:
PDF, 542 KB
1986
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