2D semiconductor device simulations by WENO-Boltzmann schemes: Efficiency, boundary conditions and comparison to Monte Carlo methods
José A. Carrillo, Irene M. Gamba, Armando Majorana, Chi-Wang ShuVolume:
214
Year:
2006
Language:
english
Pages:
26
DOI:
10.1016/j.jcp.2005.09.005
File:
PDF, 870 KB
english, 2006