Comparison of the In distribution in InGaN/GaN quantum well...

Journal of Crystal Growth 2004 Vol. 262; Iss. 1-4

Comparison of the In distribution in InGaN/GaN quantum well structures grown by molecular beam epitaxy and metalorganic vapor phase epitaxy

V. Potin, E. Hahn, A. Rosenauer, D. Gerthsen, B. Kuhn, F. Scholz, A. Dussaigne, B. Damilano, N. Grandjean
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Volume:
262
Year:
2004
Language:
english
Pages:
6
DOI:
10.1016/j.jcrysgro.2003.10.082
File:
PDF, 277 KB
english, 2004
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