Selective epitaxial growth of boron- and phosphorus-doped Si and SiGe for raised sources and drains
J.M Hartmann, L Clavelier, C Jahan, P Holliger, G Rolland, T Billon, C DefranouxVolume:
264
Year:
2004
Language:
english
Pages:
12
DOI:
10.1016/j.jcrysgro.2003.12.055
File:
PDF, 809 KB
english, 2004