A study of Indium incorporation efficiency in InGaN grown...

Journal of Crystal Growth 2004 Vol. 265; Iss. 3-4

A study of Indium incorporation efficiency in InGaN grown by MOVPE

Matteo Bosi, Roberto Fornari
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Volume:
265
Year:
2004
Language:
english
Pages:
6
DOI:
10.1016/j.jcrysgro.2004.02.103
File:
PDF, 192 KB
english, 2004
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