Highly improved performance of a 350 nm...

Highly improved performance of a 350 nm ultraviolet light-emitting diode containing AlxGa1−xN/AlyGa1−yN distributed Bragg reflectors

T Wang, P.J Parbrook, C.N Harrison, J.P Ao, Y Ohno
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Volume:
267
Year:
2004
Language:
english
Pages:
5
DOI:
10.1016/j.jcrysgro.2004.04.029
File:
PDF, 204 KB
english, 2004
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