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MOCVD Growth of InP on 4-inch Si Substrate with GaAs...

Japanese Journal of Applied Physics 1987 / 10 Vol. 26; Iss. Part 2, No

MOCVD Growth of InP on 4-inch Si Substrate with GaAs Intermediate Layer

Seki, Akinori, Konushi, Fumihiro, Kudo, Jun, Kakimoto, Seizo, Fukushima, Takashi, Koba, Masayoshi
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Volume:
26
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.26.L1587
Date:
October, 1987
File:
PDF, 1.01 MB
1987
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