Intermixing Process of InGaAs/InP MQW Grown by Metalorganic...

Japanese Journal of Applied Physics 1987 / 10 Vol. 26; Iss. Part 2, No

Intermixing Process of InGaAs/InP MQW Grown by Metalorganic Molecular Beam Epitaxy at Thermal Annealing

Nakashima, Kiichi, Kawaguchi, Yoshihiro, Kawamura, Yuichi, Asahi, Hajime, Imamura, Yoshihiro
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Volume:
26
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.26.L1620
Date:
October, 1987
File:
PDF, 507 KB
1987
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