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Deposition of bulk GaN from solution in gallium under high N2 pressure on silicon carbide and sapphire substrates
M. Boćkowski, I. Grzegory, S. Krukowski, B. Łucznik, M. Wróblewski, G. Kamler, J. Borysiuk, P. Kwiatkowski, K. Jasik, S. PorowskiVolume:
270
Year:
2004
Language:
english
Pages:
11
DOI:
10.1016/j.jcrysgro.2004.06.060
File:
PDF, 526 KB
english, 2004