High-quality Al0.12Ga0.88N film with low dislocation...

Journal of Crystal Growth 2004 Vol. 272; Iss. 1-4

High-quality Al0.12Ga0.88N film with low dislocation density grown on facet-controlled Al0.12Ga0.88N by MOVPE

Takeshi Kawashima, Kazuyoshi Iida, Yasuto Miyake, Akira Honshio, Hideki Kasugai, Masataka Imura, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki
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Volume:
272
Year:
2004
Language:
english
Pages:
4
DOI:
10.1016/j.jcrysgro.2004.08.101
File:
PDF, 351 KB
english, 2004
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