In situ optical analysis of low temperature MOCVD GaN...

Journal of Crystal Growth 2004 Vol. 272; Iss. 1-4

In situ optical analysis of low temperature MOCVD GaN nucleation layer formation via multiple wavelength ellipsometry

Klaus Schmidegg, Gerold Neuwirt, David Stifter, Helmut Sitter, Alberta Bonanni
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Volume:
272
Year:
2004
Language:
english
Pages:
5
DOI:
10.1016/j.jcrysgro.2004.09.011
File:
PDF, 209 KB
english, 2004
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