Effects of growth pressure on AlGaN and Mg-doped GaN grown using multiwafer metal organic vapor phase epitaxy system
H. Tokunaga, A. Ubukata, Y. Yano, A. Yamaguchi, N. Akutsu, T. Yamasaki, K. MatsumotoVolume:
272
Year:
2004
Language:
english
Pages:
5
DOI:
10.1016/j.jcrysgro.2004.09.017
File:
PDF, 227 KB
english, 2004