High uniformity of InGaAsP layers grown by multi-wafer...

Journal of Crystal Growth 2004 Vol. 272; Iss. 1-4

High uniformity of InGaAsP layers grown by multi-wafer MOVPE system

Eiichi Shimizu, Shizuo Sugawara, Hirofumi Nakata
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Volume:
272
Year:
2004
Language:
english
Pages:
7
DOI:
10.1016/j.jcrysgro.2004.09.030
File:
PDF, 414 KB
english, 2004
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