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In situ doping control for growth of n–p–n Si/SiGe/Si heterojunction bipolar transistor by gas source molecular beam epitaxy
F. Gao, D.D. Huang, J.P. Li, C. LiuVolume:
273
Year:
2005
Language:
english
Pages:
5
DOI:
10.1016/j.jcrysgro.2004.09.057
File:
PDF, 184 KB
english, 2005