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Influence of the nucleation layer morphology and epilayer structure on the resistivity of GaN films grown on c-plane sapphire by MOCVD
A.P. Grzegorczyk, L. Macht, P.R. Hageman, J.L. Weyher, P.K. LarsenVolume:
273
Year:
2005
Language:
english
Pages:
7
DOI:
10.1016/j.jcrysgro.2004.09.100
File:
PDF, 340 KB
english, 2005