GaSb-InAs n-TFET With Doped Source Underlap Exhibiting Low...

IEEE Electron Device Letters 2014 / 12 Vol. 35; Iss. 12

GaSb-InAs n-TFET With Doped Source Underlap Exhibiting Low Subthreshold Swing at Sub-10-nm Gate-Lengths

Sharma, Ankit, Goud, Akkala Arun, Roy, Kaushik
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Volume:
35
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2014.2365413
Date:
December, 2014
File:
PDF, 750 KB
english, 2014
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