Ultra shallow sidewall GaAs tunnel junctions prepared by...

Journal of Crystal Growth 2005 Vol. 275; Iss. 1-2

Ultra shallow sidewall GaAs tunnel junctions prepared by low-temperature area-selective epitaxial re-growth method

Yutaka Oyama, Takeo Ohno, Ken Suto, Jun-ichi Nishizawa
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
275
Year:
2005
Language:
english
Pages:
1
DOI:
10.1016/j.jcrysgro.2004.11.137
File:
PDF, 509 KB
english, 2005
Conversion to is in progress
Conversion to is failed