Growth of SiGe-on-insulator and its application as a...

Journal of Crystal Growth 2005 Vol. 275; Iss. 1-2

Growth of SiGe-on-insulator and its application as a substrate for epitaxy of strained-Si layer

Noritaka Usami, Kentaro Kutsukake, Wugen Pan, Kozo Fujiwara, Toru Ujihara, Baoping Zhang, Takashi Yokoyama, Kazuo Nakajima
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Volume:
275
Year:
2005
Language:
english
Pages:
1
DOI:
10.1016/j.jcrysgro.2004.11.141
File:
PDF, 232 KB
english, 2005
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