Defect status near the SiC/substrate interface: investigation of the first stage of the growth by physical vapour transport
A. Mantzari, E.K. Polychroniadis, J. Wollweber, A. Freudenberg, C. Balloud, J. CamasselVolume:
275
Year:
2005
Language:
english
Pages:
1
DOI:
10.1016/j.jcrysgro.2004.11.254
File:
PDF, 375 KB
english, 2005