Buffer-layer-free growth of high-quality epitaxial GaN...

Journal of Crystal Growth 2005 Vol. 276; Iss. 3-4

Buffer-layer-free growth of high-quality epitaxial GaN films on 4H-SiC substrate by metal-organic chemical vapor deposition

Jae Kyeong Jeong, Jung-Hae Choi, Hyun Jin Kim, Hui-Chan Seo, Hee Jin Kim, Euijoon Yoon, Cheol Seong Hwang, Hyeong Joon Kim
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Volume:
276
Year:
2005
Language:
english
Pages:
8
DOI:
10.1016/j.jcrysgro.2004.12.002
File:
PDF, 309 KB
english, 2005
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