Growth of crack-free GaN on Si(1 1 1) with graded AlGaN buffer layers
A. Able, W. Wegscheider, K. Engl, J. ZweckVolume:
276
Year:
2005
Language:
english
Pages:
4
DOI:
10.1016/j.jcrysgro.2004.12.003
File:
PDF, 252 KB
english, 2005