Defect formation mechanism in beam-induced lateral epitaxy...

Journal of Crystal Growth 2005 Vol. 277; Iss. 1-4

Defect formation mechanism in beam-induced lateral epitaxy on (1 1 1)B GaAs substrate

Koji Saitoh, Takashi Suzuki, Takahiro Maruyama, Shigeya Naritsuka
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Volume:
277
Year:
2005
Language:
english
Pages:
6
DOI:
10.1016/j.jcrysgro.2004.12.173
File:
PDF, 316 KB
english, 2005
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