Growth of InN on Ge substrate by molecular beam epitaxy

Journal of Crystal Growth 2005 Vol. 279; Iss. 3-4

Growth of InN on Ge substrate by molecular beam epitaxy

Elaissa Trybus, Gon Namkoong, Walter Henderson, W. Alan Doolittle, Rong Liu, Jin Mei, Fernando Ponce, Maurice Cheung, Fei Chen, Madalina Furis, Alexander Cartwright
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Volume:
279
Year:
2005
Language:
english
Pages:
5
DOI:
10.1016/j.jcrysgro.2005.02.041
File:
PDF, 270 KB
english, 2005
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