Fabrication of MIM capacitors with 1000 Å silicon...

Journal of Crystal Growth 2005 Vol. 279; Iss. 3-4

Fabrication of MIM capacitors with 1000 Å silicon nitride layer deposited by PECVD for InGaP/GaAs HBT applications

Soon-Jin So, Doo-Seok Oh, Ho-Kun Sung, Choon-Bae Park
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Volume:
279
Year:
2005
Language:
english
Pages:
8
DOI:
10.1016/j.jcrysgro.2005.02.073
File:
PDF, 770 KB
english, 2005
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