Radiation Induced Si–SiO 2...

Japanese Journal of Applied Physics 1989 / 5 Vol. 28; Iss. Part 1, No

Radiation Induced Si–SiO 2 Interface States and Positive Charge Buildup of MOS Capacitors Annealed in Nitrogen and in Hydrogen After Metalization

Ohnishi, Kazunori, Ushirokawa, Akio
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Volume:
28
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.28.877
Date:
May, 1989
File:
PDF, 969 KB
1989
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