Growth of multicrystalline Si with controlled grain...

Growth of multicrystalline Si with controlled grain boundary configuration by the floating zone technique

Masayuki Kitamura, Noritaka Usami, Takamasa Sugawara, Kenrato Kutsukake, Kozo Fujiwara, Yoshitaro Nose, Toetsu Shishido, Kazuo Nakajima
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Volume:
280
Year:
2005
Language:
english
Pages:
6
DOI:
10.1016/j.jcrysgro.2005.04.049
File:
PDF, 405 KB
english, 2005
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