Arsenic surface segregation during in situ doped silicon...

Journal of Crystal Growth 2005 Vol. 281; Iss. 2-4

Arsenic surface segregation during in situ doped silicon and Si1−xGex molecular beam epitaxy

Xian Liu, Qiang Tang, James S. Harris, Theodore I. Kamins
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Volume:
281
Year:
2005
Language:
english
Pages:
10
DOI:
10.1016/j.jcrysgro.2005.04.066
File:
PDF, 466 KB
english, 2005
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