Effects of reactor pressure and residence time on GaN MOVPE...

Journal of Crystal Growth 2006 Vol. 287; Iss. 2

Effects of reactor pressure and residence time on GaN MOVPE growth efficiency

W.V. Lundin, E.E. Zavarin, D.S. Sizov, M.A. Sinitsin, A.F. Tsatsul’nikov, A.V. Kondratyev, E.V. Yakovlev, R.A. Talalaev
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Volume:
287
Year:
2006
Language:
english
Pages:
5
DOI:
10.1016/j.jcrysgro.2005.10.084
File:
PDF, 172 KB
english, 2006
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