Ultra-High Throughput of GaAs and (AlGa)As Layers Grown by Molecular Beam Epitaxy (MBE) with a Specially Designed MBE System
Sonoda, Takuji, Ito, Michihiro, Segawa, Kazuaki, Takamiya, Saburo, Mitsui, ShigeruVolume:
27
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.27.337
Date:
March, 1988
File:
PDF, 1.63 MB
1988