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Hexamethyldisilane/propane versus silane/propane precursors: application to the growth of high-quality 3C–SiC on Si
Ferro, G, Camassel, J, Juillaguet, S, Balloud, C, Polychroniadis, E K, Stoemenos, Y, Dazord, J, Peyre, H, Monteil, Y, Rushworth, S A, Smith, L MVolume:
18
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/18/12/303
Date:
December, 2003
File:
PDF, 566 KB
english, 2003