High Reliability in AlGaAs Laser Diodes Prepared by...

Japanese Journal of Applied Physics 1988 / 5 Vol. 27; Iss. Part 2, No

High Reliability in AlGaAs Laser Diodes Prepared by Molecular Beam Epitaxy on 0.5°-Misoriented (111)B Substrates

Hayakawa, Toshiro, Takahashi, Kosei, Suyama, Takahiro, Kondo, Masafumi, Yamamoto, Saburo, Hijikata, Toshiki
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Volume:
27
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.27.l889
Date:
May, 1988
File:
PDF, 746 KB
1988
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