Selectively Doped GaAs/N-Al 0.3...

Japanese Journal of Applied Physics 1988 / 5 Vol. 27; Iss. Part 2, No

Selectively Doped GaAs/N-Al 0.3 Ga 0.7 As Heterostructures Grown by Gas-Source MBE

Ando, Hideyasu, Kondo, Kazuhiro, Ishikawa, Hideaki, Sasa, Shigehiko, Inata, Tsuguo, Hiyamizu, Satoshi
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Volume:
27
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.27.l896
Date:
May, 1988
File:
PDF, 419 KB
1988
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