Poly-Si∕TiN∕HfO[sub 2] gate stack etching in high-density...

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures 2007 Vol. 25; Iss. 3

Poly-Si∕TiN∕HfO[sub 2] gate stack etching in high-density plasmas

A. Le Gouil, O. Joubert, G. Cunge, T. Chevolleau, L. Vallier, B. Chenevier, I. Matko
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Volume:
25
Year:
2007
Language:
english
DOI:
10.1116/1.2732736
File:
PDF, 1.26 MB
english, 2007
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