Growth of GaAs on Preferentially Etched GaAs Surfaces by...

Japanese Journal of Applied Physics 1988 / 4 Vol. 27; Iss. Part 2, No

Growth of GaAs on Preferentially Etched GaAs Surfaces by Migration-Enhanced Epitaxy

Kawashima, Minoru, Horikoshi, Yoshiji
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Volume:
27
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.27.l483
Date:
April, 1988
File:
PDF, 844 KB
1988
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