Optimization of KOH etching parameters for quantitative...

Journal of Crystal Growth 2006 Vol. 289; Iss. 2

Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC

S.A. Sakwe, R. Müller, P.J. Wellmann
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Volume:
289
Year:
2006
Language:
english
Pages:
7
DOI:
10.1016/j.jcrysgro.2005.11.096
File:
PDF, 301 KB
english, 2006
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