Growth of high-quality In-rich InGaN alloys by RF–MBE for...

Journal of Crystal Growth 2006 Vol. 288; Iss. 2

Growth of high-quality In-rich InGaN alloys by RF–MBE for the fabrication of InN-based quantum well structures

Hiroyuki Naoi, Masahito Kurouchi, Daisuke Muto, Tsutomu Araki, Takao Miyajima, Yasushi Nanishi
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Volume:
288
Year:
2006
Language:
english
Pages:
6
DOI:
10.1016/j.jcrysgro.2005.12.008
File:
PDF, 480 KB
english, 2006
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