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Segregation of Ga during growth of Si single crystal
Takeshi Hoshikawa, Xinming Huang, Satoshi Uda, Toshinori TaishiVolume:
290
Year:
2006
Language:
english
Pages:
3
DOI:
10.1016/j.jcrysgro.2006.01.026
File:
PDF, 140 KB
english, 2006