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Dominating nucleation of misfit dislocations from the surface in GeSi/Si(0 0 1) films with a stepwise composition grown by means of molecular-beam epitaxy
Yu.B. Bolkhovityanov, A.S. Deryabin, A.K. Gutakovskii, M.A. Revenko, L.V. SokolovVolume:
293
Year:
2006
Language:
english
Pages:
6
DOI:
10.1016/j.jcrysgro.2006.05.018
File:
PDF, 402 KB
english, 2006