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Sticking behavior of the dopants Si, C, and Be upon re-evaporation of individually doped GaAs(1 0 0)
J.L. Yang, D. Reuter, A.D. WieckVolume:
293
Year:
2006
Language:
english
Pages:
7
DOI:
10.1016/j.jcrysgro.2006.05.051
File:
PDF, 573 KB
english, 2006