Electrical properties of undoped In0.53Ga0.47As grown on...

Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy

L.J. Cui, Y.P. Zeng, B.Q. Wang, Z.P. Zhu
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Volume:
293
Year:
2006
Language:
english
Pages:
3
DOI:
10.1016/j.jcrysgro.2006.05.071
File:
PDF, 117 KB
english, 2006
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