Low-temperature homoepitaxial growth of α-SiC on on-axis...

Journal of Crystal Growth 2006 Vol. 293; Iss. 2

Low-temperature homoepitaxial growth of α-SiC on on-axis (0 0 0 1) substrate by vapor–liquid–solid mechanism

M. Soueidan, G. Ferro, B. Nsouli, F. Cauwet, L. Mollet, C. Jacquier, G. Younes, Y. Monteil
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Volume:
293
Year:
2006
Language:
english
Pages:
5
DOI:
10.1016/j.jcrysgro.2006.06.001
File:
PDF, 428 KB
english, 2006
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