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MBE growth of highly strained InGaPN/GaPN quantum well with high indium content
S.M. Kim, Y. Furukawa, H. Yonezu, K. Umeno, A. WakaharaVolume:
293
Year:
2006
Language:
english
Pages:
6
DOI:
10.1016/j.jcrysgro.2006.06.010
File:
PDF, 226 KB
english, 2006