InGaN-based epilayers and quantum wells with intense...

Journal of Crystal Growth 2007 Vol. 301-302; Iss. none

InGaN-based epilayers and quantum wells with intense room-temperature photoluminescence in the 500–650 nm range

Sergey V. Ivanov, Valentin N. Jmerik, Tatiana V. Shubina, Svyatoslav B. Listoshin, Andrey M. Mizerov, Alla A. Sitnikova, Min-Ho Kim, Masayoshi Koike, Bum-Joon Kim, Pyotr S. Kop’ev
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Volume:
301-302
Year:
2007
Language:
english
Pages:
4
DOI:
10.1016/j.jcrysgro.2006.09.008
File:
PDF, 284 KB
english, 2007
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