Low-resistance graded AlxGa1−xN buffer layers for vertical...

Journal of Crystal Growth 2007 Vol. 298; Iss. none

Low-resistance graded AlxGa1−xN buffer layers for vertical conducting devices on n-SiC substrates

Atsushi Nishikawa, Kazuhide Kumakura, Tetsuya Akasaka, Toshiki Makimoto
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Volume:
298
Year:
2007
Language:
english
Pages:
3
DOI:
10.1016/j.jcrysgro.2006.10.102
File:
PDF, 396 KB
english, 2007
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